MPCVD MACHINE

  • Price:100000-800000USD
  • Power:6kW-10Kw
  • Pressure:10~200 torr
  • Customize:with biasing function

• Faster crystal growth speed - 10-100 times faster than traditional methods

• More production capacity - more production capacity in a single batch

• Higher quality performance - higher hardness and toughness than natural diamonds.

• More diversified colors - white, yellow, pink, blue, etc.

• Higher diamond purity - purer than natural diamond Type II

• Multi style customization can be customized according to different market

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What is MPCVD?

MPCVD MACHINEMicrowave plasma chemical vapor deposition (MPCVD) is the mainstream equipment for diamond growth. The gas sources used by MPCVD equipment mainly include hydrogen (H2), methane (CH4), nitrogen (N2) and oxygen (O2), which are cracked into H, O, N atoms or CH2, CH3, C2H2, OH and other groups under the action of microwave. Carbon containing groups (CH2, CH3, C2H2) will form gas-solid mixed interface on the diamond surface, and diamond (sp3), amorphous carbon or graphite (sp2) can be grown under the dynamic equilibrium model or non-equilibrium thermodynamic model. The etching speed of amorphous carbon or graphite (sp2) by hydrogen plasma is much faster than that of diamond (sp3), so the non diamond phase on the surface of CVD diamond is rapidly etched to achieve diamond growth.

The basic structure of MPCVD equipment includes control unit, microwave unit, water cooling unit, vacuum unit, etc. The cavity is vacuumized through a vacuum unit to ensure the low vacuum state required for diamond growth. Then the control unit controls the flow rate and chamber pressure of each gas path, and leads the reaction gas source (CH4, H2, Ar, O2, N2, etc.) into the chamber and controls it at a certain chamber pressure. After the air flow is stabilized, microwave is generated through the microwave unit and guided into the cavity by the wave guide. Under the action of microwave field, the reaction gas is changed into plasma state to form a plasma ball suspended above the diamond substrate, and the substrate is heated to a certain temperature by using the high temperature of the plasma. The excess heat generated in the cavity is transmitted by the water cooling unit. In the MPCVD growth process of single crystal diamond, the optimal growth conditions are ensured by adjusting the power, gas source composition, cavity pressure and other conditions. In addition, due to the non contact between the plasma ball and the cavity wall, it ensures that there is no impurity particles in the diamond growth process and improves the diamond quality.

Component

Microwave system

Microwave system

  • 1.Germany MUEGGE microwave source power unit
  • 2.Microwave frequency 2450±15MHZ
  • 3.Oulitput power 0.6 KW~6KW continuously adjustable
  • 4.Microwave leakage ≤2MW/cm2
  • 5.Microwave stability better than 1%
  • 6.Microwave 3 pin adjuster, excitation cavity, high-power load
  • 7.Water cooling flow: 7L/min
Reaction chamber

Reaction chamber

  • 1. The microwave resonant cavity adopts 304 stainless steel, double layer water cooling
  • 2 The cylindrical reaction chamber can bear more than 6KW of power
  • 3.Molybdenum substrate table diameter 60mm,effective working area ≥50mm
  • 4.Water cooling system for molybdenum substrate platform
  • 5.Step-less accurate electric lifting system with 60mm travel distance
Gas flow system

Gas flow system

  • 1. 5 channels MFC flow meter, H2/CH4/O2/N/Ar
  • 2. Working press 0.05-0.3MPa, accuracy ±2%
  • 3. Independent Pneumatic valve control for each channel flow meter
Vacuum and sensor system

Vacuum and sensor system

  • 1. First stage rotary vacuum pump with speed of 4.4L/s,optional turbo vacuum pump system
  • 2. Max, vacuum degree up to 2×10-7mbar
  • 3. Vacuum pressure maintaining <0.2mTorr/min.
  • 4. Inficon pirani vacuum gauge working ranges 10-2pa
  • 5. High accurate infrared temperature sensor ranges 300~1400℃
Control system

Control system

  • 1. PLC program control system,touch screen control with gas flow,working pressure and valve
  • 2. Microwave power unit interlock protection,optional communicate port
  • 3. Working state can be choose with constant pressure and constant temperature
  • 4. Safety protection system will stop all systems when error detected

Parameters

Microwave Power 6-15Kw/ 2150MHz/915MHz
Reactor Chamber Material Stainless Steel
Stage Type Water-cooling
Standard Substrate Holder 50-120mm/2-4inches
tandard Gas Channel
(up to 6 channels)
3 channels (H2/CH4/N2)
Operating Pressure Range 10~200 torr
Vacuum Leak Integrity
(by He leak delector)
< 1x10-9 mbar. l/sec
Vacuum Pump Type (Standard) Rotary Vacuum Pump
[18/22 m3/h (50/60Hz)]

Application

  • heat sink

    Heat sink

  • jewelry

    Optics

  • Wear-resistant device

    Wear-resistant device

  • semiconductor

    Semiconductor

  • jewelry

    Jewelry

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    Precision Cutting Tools

  • Acoustics

    Acoustics

  • Medicine

    Medicine

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